Title:
液晶表示装置の作製方法及びEL表示装置の作製方法
Document Type and Number:
Japanese Patent JP4209822
Kind Code:
B2
Abstract:
To provide sure contacts of electrodes in a semiconductor device.
The semiconductor device has a thin-film transistor (TFT), a dielectric film composed of a silicide film formed on the TFT and a resinous material formed on the dielectric film composed of the silicide film. Contact holes are formed in the dielectric film composed of the silicide film and the dielectric film composed of the resinous material. The openings of the contact holes formed in the dielectric film composed of the resinous material are wider than the openings of the contact holes formed in the dielectric film composed of the silicide film.
COPYRIGHT: (C)2005,JPO&NCIPI
Inventors:
Shunpei Yamazaki
Kenji Fukunaga
Hideomi Suzawa
Misako Nakazawa
Kenji Fukunaga
Hideomi Suzawa
Misako Nakazawa
Application Number:
JP2004233978A
Publication Date:
January 14, 2009
Filing Date:
August 11, 2004
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/1368; H01L21/768; G09F9/30; H01L21/28; H01L21/3065; H01L21/336; H01L23/522; H01L27/32; H01L29/786; H01L51/50; H05B33/14
Domestic Patent References:
| JP5090420A | ||||
| JP5090197A | ||||
| JP4155834A | ||||
| JP4007858A | ||||
| JP2025024A | ||||
| JP7099324A | ||||
| JP7094757A |