Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JPH0745797
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor storage device that can be provided with a high capacity without any significant modification to manufacturing facilities therefor, and that enabled stable operation.
CONSTITUTION: A well 22 has a groove 23 formed therein. An oxide film, a floating gate 27a, 27b and a control gate 30 are formed on the side wall 25 of the groove 23 in this order. A diffusion layer 28a, 28b is formed within the side wall 25 opposite to the floating gate 27a, 27b, and current is passed along the side wall 25 of the groove 23. This requires no significant modification to manufacturing facilities for the device, and can microminiaturize its memory cells and provide them with a high capacity.
Inventors:
WATANABE TOSHIHARU
Application Number:
JP18974893A
Publication Date:
February 14, 1995
Filing Date:
July 30, 1993
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/8247; H01L27/115; (IPC1-7): H01L27/115
Attorney, Agent or Firm:
Takehiko Suzue
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