Title:
【発明の名称】SOI層上酸化膜の形成方法ならびに結合ウエーハの製造方法およびこの方法で製造される結合ウエーハ
Document Type and Number:
Japanese Patent JP3327180
Kind Code:
B2
Abstract:
In a method of fabricating a bonded wafer, an oxide film is first formed on the surface of at least one of two mirror-polished silicon wafers. The two silicon wafers are superposed such that the mirror-polished surfaces come into close contact with each other, and heat treatment is performed in order to join the wafers together firmly. Subsequently, the thickness of one of the wafers is reduced so as to yield a thin film, the surface of which is then polished and subjected to vapor-phase etching in order to make the thickness of the thin film uniform. Optionally, the vapor-phase-etched surface is then mirror-polished. The surface of the bonded wafer is oxidized, and the generated surface oxide film (25) is then removed. In the method, the thickness of the oxide film (25) formed on the surface of the bonded wafer is made not greater than 50 nm. The method reliably eliminates damage and crystal defects generated during etching in accordance with PACE method or subsequent mirror polishing, and thereby enables relatively simple and low cost manufacture of bonded wafers having a very thin SOI layer (21) that has good thickness uniformity and excellent crystallinity.
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Inventors:
Koji Aga
Kiyoshi Mitani
Seigo Nakano
Kiyoshi Mitani
Seigo Nakano
Application Number:
JP24930797A
Publication Date:
September 24, 2002
Filing Date:
August 29, 1997
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/304; H01L21/02; H01L21/20; H01L21/762; H01L27/12; (IPC1-7): H01L21/02; H01L21/304; H01L27/12
Domestic Patent References:
| JP8222715A | ||||
| JP6338604A | ||||
| JP4282867A |
Attorney, Agent or Firm:
Mikio Yoshimiya