Title:
減少された裏側汚染の為のインシトゥウェーハ加熱
Document Type and Number:
Japanese Patent JP4316833
Kind Code:
B2
Abstract:
A method is provided for preparing a substrate for processing in a chamber that has a substrate receiving portion. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.
Inventors:
Kent Rothman
Application Number:
JP2001364704A
Publication Date:
August 19, 2009
Filing Date:
November 29, 2001
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C16/52; H01L21/683; C23C14/02; C23C16/02; H01L21/02; H01L21/205; H01L21/302
Domestic Patent References:
| JP11074333A | ||||
| JP10321603A | ||||
| JP10135186A | ||||
| JP2000243817A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Ikeda adult
Yuichi Yamada
Yasuhito Suzuki
Ikeda adult
Yuichi Yamada
Yasuhito Suzuki
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