PURPOSE: To reduce a warp which is caused by a method wherein a metallized face for warp-prevention use is formed in such a way that a metallized pattern on the side of a semiconductor element and a metallized pattern on the side of a heat sink are nearly the same.
CONSTITUTION: Metallized faces 2 for warp-prevention use are formed on the side of a semiconductor element on an insulating board 1 in addition to a metallized face 3 for a power-transistor chip mounting part, an aluminum-pad mounting part and a part in which a power-transistor chip and an aluminum pad are made conductive. The metallized faces 2 for warp-prevention use are formed on the side of the semiconductor element on the insulating board 1 in such a way that a metallized pattern on the side of the semiconductor element for semiconductor element use and a metallized pattern on the side of a heat sink on the insulating board 1 are nearly the same. As a result, it is possible to reduce a warp, of the insulating board 1, caused at a sintering process of the insulating board..
KATAGISHI KENICHI
KOIKE HIROSHI
HITACHI AUTOMOTIVE ENG