Title:
INTERLAYER INSULATING FILM AND/OR COMPOSITION FOR SURFACE PROTECTION FILM OF SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3462941
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve reliability of moisture-proof characteristic for an interlayer insulating film of semiconductor substrate having excellent heat-proof characteristic, lower dielectric constant and lone humidity absorbing characteristic and/or composition for surface protection film and a semiconductor device utilizing the same composition.
SOLUTION: An interlayer insulating film of a semiconductor substrate including polyquinoline resin or polyquinoxaline resin and/or composition for surface protection film and a semiconductor device using a film including polyquinoline resin or polyquinoxaline resin as the interlayer insulating film of the semiconductor substrate and/or surface protection film.
Inventors:
Sato
Application Number:
JP22759295A
Publication Date:
November 05, 2003
Filing Date:
September 05, 1995
Export Citation:
Assignee:
Hitachi Chemical Co., Ltd.
International Classes:
C08G73/00; C08G65/40; C08L79/00; H01L21/312; H01L21/768; H01L23/522; (IPC1-7): H01L21/312; C08G65/40; H01L21/768
Domestic Patent References:
| JP6283864A | ||||
| JP55143056A |
Attorney, Agent or Firm:
Tetsuo Hodaka