PURPOSE: To generate a plurality of lights having wavelengths in both wavelength ranges of an infrared band and a visible band by laminating an active layer containing a GaAs and an active layer containing a GaInP by lattice- matching to an GaAs series substrate as a TJS structure.

CONSTITUTION: An AlGaInP series active layer 3, i.e., an AlGaInP series active layer containing a composition of a yIn-yP can be directly transited, and its group III composition ratios, x, y are varied under a lattice-matching condition to a GaAs substrate 1. Thus, a band gap is varied in a range of 1.9 to 2.3eV. In an AlGaAs series active layer 5, its group III composition ratio is varied. Thus, a band gap is varied in a range of 1.43 to 1.9eV thereby providing possibility of direct transition in the range.