Title:
LASER-ROUGHENED REACTION-BONDED SILICON CARBIDE FOR WAFER CONTACT SURFACE
Document Type and Number:
Japanese Patent JP2023143846
Kind Code:
A
Abstract:
To provide a method of making a ceramic device with a controlled roughness and a ceramic device having a controlled roughness produced by the method.SOLUTION: A method of making a ceramic device with a controlled roughness includes using a defocused laser beam to roughen a surface of a ceramic substrate, and removing one or more portions of the roughened surface without removing all of the roughened surface. If desired, the ceramic device may include reaction-bonded silicon carbide, and an opening may be formed in the device so that the device can be used to apply a clamping suction to a wafer surface. A ceramic surface with a controlled roughness is also disclosed. The defocused laser beam may be used to make the surface rough enough to prevent it from sticking to a mating element, and to have adequate wear resistance, but not so rough as to prevent the formation of sufficient suction to clamp the surface to a mating element.SELECTED DRAWING: Figure 8
Inventors:
NICHOLAS COOMBS
JON COPPOLA
MIKE AGHAJANIAN
AARON CHRISS
JON COPPOLA
MIKE AGHAJANIAN
AARON CHRISS
Application Number:
JP2023045611A
Publication Date:
October 06, 2023
Filing Date:
March 22, 2023
Export Citation:
Assignee:
II VI DELAWARE INC
International Classes:
C04B41/91; B23K26/352; C04B35/573; C04B41/80; H01L21/683
Attorney, Agent or Firm:
Patent Attorney Corporation Asamura Patent Office