Title:
リフトオフ方法
Document Type and Number:
Japanese Patent JP7007053
Kind Code:
B2
Abstract:
A lift-off method transfers onto a transfer substrate an optical device layer of an optical device wafer in which the optical device layer is formed over a front surface of an epitaxy substrate through a GaN buffer layer. The lift-off method includes: bonding the transfer substrate onto a front surface of the optical device layer through a bonding layer to form a composite substrate; applying a pulsed laser beam of such a wavelength as to be transferred through the epitaxy substrate constituting the composite substrate but to be absorbed in the buffer layer from a back surface side of the epitaxy substrate, to break the buffer layer; and peeling the optical device layer from the epitaxy substrate and transferring the optical device layer onto the transfer substrate, after the buffer layer breaking step is performed.
Inventors:
Masaru Koyanagi
Hiroki Takeuchi
Hiroki Takeuchi
Application Number:
JP2017201299A
Publication Date:
January 24, 2022
Filing Date:
October 17, 2017
Export Citation:
Assignee:
Disco Co., Ltd.
International Classes:
H01L33/32; B23K26/53; B23K26/57
Domestic Patent References:
| JP2012038948A | ||||
| JP2013229386A | ||||
| JP2012526369A | ||||
| JP2016021464A | ||||
| JP2015144192A | ||||
| JP2013107128A | ||||
| JP2009541989A | ||||
| JP2015199094A | ||||
| JP2007535152A |
Foreign References:
| US20110024831 |
Attorney, Agent or Firm:
Matsumoto
Tomohiro Okamoto
Takahiro Kasahara
Tomohiro Okamoto
Takahiro Kasahara
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