Title:
LIGHT EMITTING ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH05121781
Kind Code:
A
Abstract:
PURPOSE:To form a P-type hole injection layer so as to provide a P-N junction type blue light emitting element. CONSTITUTION:P-conductivity type ZnTe layers 112a and non-doped ZnS layers 112b are alternately laminated on an N-conductivity type ZnS substrate 111 to form a multi-quantum well structure 112. A positive electrode 113 is provided onto the multi-quantum well structure 112, and a negative electrode 114 is formed on the rear of the N-conductivity type ZnS substrate 111. When a forward bias voltage is applied onto this light emitting element, electrons are injected into the multi-quantum well structure 112 from the N-conductivity type ZnS substrate 111 and combined with holes in the multi-quantum well structure 112, whereby blue light can be obtained. Therefore, a P-conductivity type hole injection layer can be easily obtained well in reproducibility, and the injection of carrier high in density and the emission of blue light high in efficiency can be realized.
Inventors:
YOKOGAWA TOSHIYA
NARISAWA TADASHI
KUBO MINORU
NARISAWA TADASHI
KUBO MINORU
Application Number:
JP6802992A
Publication Date:
May 18, 1993
Filing Date:
March 26, 1992
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/365; H01L33/06; H01L33/14; H01L33/28; H01L33/30; H01L33/40; (IPC1-7): H01L21/365; H01L33/00
Domestic Patent References:
| JPS63245984A | 1988-10-13 | |||
| JPS6126271A | 1986-02-05 |
Attorney, Agent or Firm:
Akira Kobiji (2 outside)