To provide a light-emitting element having a light-emitting layer of improved crystallinity and easy for mass production and a manufacturing method of the light-emitting element.
A light-emitting element manufacturing method comprises: a step of crystal growing a laminate including an etching easy layer adjacent to a first substrate composed of a III-V compound semiconductor and a light-emitting layer composed of a nitride-based semiconductor on the first substrate; a step of forming a transparent electrode and a first metal layer on the laminate in this order; a step of bonding a surface of a second metal layer provided on a second substrate with a surface of the first metal layer by heating the first and second metal layers in a stuck state; and a step of separating the first substrate and the second substrate on which the light-emitting layer is provided by removing the etching easy layer by use of solution etching or removing the etching easy layer by use of mechanical polishing.
JP2005259912A | 2005-09-22 | |||
JP2005217112A | 2005-08-11 | |||
JP2000260760A | 2000-09-22 | |||
JP2005175462A | 2005-06-30 | |||
JP2007180142A | 2007-07-12 |
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