Title:
LIQUID CRYSTAL DEVICE
Document Type and Number:
Japanese Patent JPH04133029
Kind Code:
A
Abstract:
PURPOSE:To make a device small in size and light in weight and to reduce the cost of the device by forming a switching element TFT for an optical shutter and a driver TFT for driving a liquid crystal device on the same substrate. CONSTITUTION:A high-resistance amorphous semiconductor layer 2 is formed on a substrate 1 having an ITO electrode 19. Next, doping is performed by irradiating an area including the source and the drain of the high-resistance layer 2 being a transistor for driving, that is, a doping area 5 with an excimer laser beam 10. Then, the doping area 5 is irradiated with an excimer laser beam 11 and cut into a source area 3 and a drain area 4. Continuously, a high- resistance amorphous semiconductor layer 15 under a cut pat 12, that is, a part being the driver TFT for driving the liquid crystal device is irradiated with a laser beam 14 so as to be polycrystalline. Then, a gate insulating film 6 is formed to cover the cut part 12. Furthermore, a gate electrode 7, a source electrode 8 and a drain electrode 9 are formed.
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Inventors:
MASE AKIRA
Application Number:
JP25452390A
Publication Date:
May 07, 1992
Filing Date:
September 25, 1990
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
G02F1/1343; G02F1/136; G02F1/1368; H01L21/20; H01L21/336; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): G02F1/1343; G02F1/136; H01L21/336; H01L27/12; H01L29/784
Attorney, Agent or Firm:
Kyosuke Kato