Title:
TFT PANEL
Document Type and Number:
Japanese Patent JPH04133030
Kind Code:
A
Abstract:
PURPOSE:To prevent short circuit between a gate electrode and a drain electrode by forming a guard electrode at one part of an area between the gate electrode and a data wiring so that it may project to the outside of a scanning wiring and opposing the guard electrode to the drain electrode through a gate insulating film and a semiconductor layer. CONSTITUTION:The guard electrode 33 for protecting a transistor is formed on the outside of the scanning wiring 22. Then, one guard electrode 33 is formed corresponding to one part of the area between the base end side of the drain electrode 30, that is, the gate electrode 26 and the data wiring 23 and the other guard electrode is formed corresponding to the tip part of the drain electrode 30, then the respective electrodes 33 are opposed to the guard electrode counter part 34 of the drain electrode 30. Then, the guard electrode 33 is opposed to the guard electrode counter part 34 through the gate insulating film 27 and the semiconductor layer 28. The breakdown of the gate insulating film 27 caused by static electricity occurs in the guard electrode 33 nearer to the data wiring 23 than a thin film transistor 25.
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Inventors:
SATO SHUNICHI
Application Number:
JP25474490A
Publication Date:
May 07, 1992
Filing Date:
September 25, 1990
Export Citation:
Assignee:
CASIO COMPUTER CO LTD
International Classes:
G02F1/136; G02F1/1368; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): G02F1/136; H01L27/12; H01L29/784