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Title:
MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY
Document Type and Number:
Japanese Patent JP2008091794
Kind Code:
A
Abstract:

To provide a magnetic memory cell and a magnetic random access memory, of high reliability and low power consumption.

An upper electrode 108 of which a connection area 112 is smaller than the area of a ferromagnetic free layer 101 of a magnetic memory cell 1 is connected to the ferromagnetic free layer 101. A nonuniform magnetic field is generated on the magnetic memory cell by applying a current 107, to actualize a spin transfer torque magnetizing inversion of low current and less miswriting rate.


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Inventors:
ONO HIDEO
IKEDA SHOJI
HAYAKAWA JUN
Application Number:
JP2006273329A
Publication Date:
April 17, 2008
Filing Date:
October 04, 2006
Export Citation:
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Assignee:
HITACHI LTD
UNIV TOHOKU
International Classes:
H01L43/08; G11C11/15; H01L21/8246; H01L27/105; H01L29/82
Domestic Patent References:
JP2004006775A2004-01-08
JP2005116888A2005-04-28
JP2006156477A2006-06-15
JP2006210711A2006-08-10
JP2007087524A2007-04-05
JP2007227653A2007-09-06
JP2008066606A2008-03-21
JP2004006775A2004-01-08
Attorney, Agent or Firm:
Yusuke Hiraki



 
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