Title:
MAGNETO-RESISTIVE EFFECT TYPE THIN FILM MAGNETIC SENSOR
Document Type and Number:
Japanese Patent JPS5783074
Kind Code:
A
Abstract:
PURPOSE:To improve accuracy for temperature compensation by disposing a permanent magnet in a close contact with a magneto-resistance effect sencor in a compensating region for temperature. CONSTITUTION:A magneto-resistive element 2 in a sensing region and a magneto resistive element 3 in a compensating region for temperature are so arragned that their axes are perpendicular to each other. By a permanent magnet 9 disposed above the element 3 and by a strong magnetic field 10 of the magnet 9 applied on the element 3, a current flowing in the element 3 is confined in a direction 8 far from the axial line. Accordingly with a resistance of the element 3 being kept constant by an external signal magnetic field, a thin film magnetic sensor which has a good temperature compensation and linearity is obtained. Besides when a permanent magnet 11 is formed by thin film deposition method on the magneto resistive element 3 of the temperature compensation region so as to take a same form, a magnetic flux leaking outside is made very low. Besides, when a magnetized direction of the permanent magnet 11 and an axis of easy magnetization of the element 3 are brought into a coincidence, a magnetization direction of the element 3 is stabilized and confined referring to a magnetization signal, and a bias magnetic field is unnecessary for the element 2.
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Inventors:
ABIKO SHIYUUZOU
GOTOU HIROICHI
NIIMI AKIRA
TAKAGI HIROTSUGU
SAWADA TAKESHI
YONEDA HIROSHI
GOTOU HIROICHI
NIIMI AKIRA
TAKAGI HIROTSUGU
SAWADA TAKESHI
YONEDA HIROSHI
Application Number:
JP15882380A
Publication Date:
May 24, 1982
Filing Date:
November 13, 1980
Export Citation:
Assignee:
CANON KK
CANON DENSHI KK
CANON DENSHI KK
International Classes:
H01L43/08; G01R33/09; (IPC1-7): H01L43/08
Domestic Patent References:
| JPS444378Y1 | 1969-02-18 |