EQUI-POTENTIAL SENSING MAGNETIC RANDOM ACCESS MEMORY (MRAM) HAVING SERIES DIODE

Title:

EQUI-POTENTIAL SENSING MAGNETIC RANDOM ACCESS MEMORY (MRAM) HAVING SERIES DIODE

Document Type and Number:

Japanese Patent JP2003346475

Kind Code:

A

Abstract:

To provide a data storage device from which data bits can be read accurately.

A data storage device is provided with an array 165 of resistive memory cells 170, 173, 175, 177, and a circuit connected electrically to the array 165. The resistive memory cells 170, 173, 175, 177 are provided with magnetic random access memory cells 265 connected electrically to a diode 260. In the circuit, first voltage can be applied to some of the resistive memory cells 170, 173, 175, 177, second voltage can be applied to the other cells 170, 173, 175, 177 in the array 165, and third voltage can be applied to the other cells 170, 173, 175, 177 in the array 165. A method detecting a resistive state of selected resistive memory cells 175 using this circuit is also disclosed.

Inventors:

PERNER FREDERICK A
TRAN LUNG T
EATON JAMES R JR

Application Number:

JP2003138724A

Publication Date:

December 05, 2003

Filing Date:

May 16, 2003

Export Citation:

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Assignee:

HEWLETT PACKARD DEVELOPMENT CO

International Classes:

G11C11/15; G11C11/16; H01L21/8246; H01L27/105; H01L43/08; (IPC1-7): G11C11/15; H01L27/105; H01L43/08

Attorney, Agent or Firm:

Satoshi Furuya (2 outside)

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