To provide a thin film magnetic storage device in which area of a write current control circuit can be reduced and area of a whole circuit for a MRAM device of large capacity also can be reduced.

In writing data, a first driver connects electrically a first shared node to one side of first and second voltage in accordance with write data. A second driver connects electrically a second shared node to the other side of first and second voltage. The device is provided with a plurality of first switch circuits coupling electrically one end side of each bit line and the first shared node respectively and a second switch circuit coupling electrically the other end side and the second shared node respectively. The first and the second switch circuits of a corresponding bit line are turned on in accordance with column selection result. Therefore, a data writing operation can be performed without providing a driver for each bit line.