MEMORY DEVICE AND METHOD FOR WRITING IN MEMORY CELL IN MEMORY DEVICE

Title:

MEMORY DEVICE AND METHOD FOR WRITING IN MEMORY CELL IN MEMORY DEVICE

Document Type and Number:

Japanese Patent JP2003346476

Kind Code:

A

Abstract:

To provide a memory device provided with mechanism for strengthening a memory state without boosting voltage to a level at which damage is given to memory cell structure and a method for writing in memory cells in the memory device.

This memory device comprises memory cells (10) provided with memory structure being switchable for a memory state, and a programming circuit (40) in which first voltage is applied to a first node of the memory structure and second voltage is applied to a second node so that the first voltage and the second voltage are made inverse polarity each other, and which performs writing for the memory cell (10).

Inventors:

RICKES JURGEN THOMAS
MCADAMS HUGH PRYOR
SUMMERFELT SCOTT ROBERT

Application Number:

JP2003135271A

Publication Date:

December 05, 2003

Filing Date:

May 14, 2003

Export Citation:

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Assignee:

AGILENT TECHNOLOGIES INC
TEXAS INSTRUMENTS INC

International Classes:

G11C11/22; (IPC1-7): G11C11/22

Attorney, Agent or Firm:

Okuyama Shoichi (2 outside)

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