Title:
MANUFACTURE OF COMPLEMENTARY TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH04262571
Kind Code:
A
Abstract:
PURPOSE: To manufacture a complementary type semiconductor device in which a substrate effect of an N-channel transistor is sufficiently suppressed, in small number of steps.
CONSTITUTION: N-type impurities 16 for forming a channel stopper are implanted to an N-type region 12, and P-type impurities 23 of a concentration lower than that of the impurities 16 are implanted to a P-type region 13 and the region 12 with a gate electrode 22 as a mask. Thus, although the mask is necessary only at the time of implanting the impurities 16, the impurities 23 are not implanted to a channel region in the region 13, and the impurities 23 implanted to the region 12 are compensated by the impurities 15 implanted to the region 12.
Inventors:
KURODA HIDEAKI
Application Number:
JP4436991A
Publication Date:
September 17, 1992
Filing Date:
February 16, 1991
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/316; H01L21/76; H01L21/8238; H01L27/08; H01L27/092; (IPC1-7): H01L21/316; H01L27/08; H01L27/092
Attorney, Agent or Firm:
Tsuchiya Masaru
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