To provide a high-quality active layer and interface of the active layer by making highly controllable crystal growth possible, and by suppressing liberation of In as much as possible in the manufacturing process of a compound semiconductor light emitting element.
The compound semiconductor light emitting element comprises a lower clad layer 4 on a substrate, an In-containing active layer 5 at a first temperature formed on the lower clad layer 4, an AlxGa1-xN(O≤X≤1) layer at a second temperature formed on the active layer, and an upper clad layer 7 at a third temperature that is larger than the second temperature formed on the AlxGa1-xN(O≤X≤1) layer. Thus, the composition ratio of In can be easily controlled, and a high-quality active layer and interface of the active layer can be provided.
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai