MANUFACTURE OF COMPOUND SEMICONDUCTOR SUBSTRATE AND TRANSISTOR USING THIS SUBSTRATE

Title:

MANUFACTURE OF COMPOUND SEMICONDUCTOR SUBSTRATE AND TRANSISTOR USING THIS SUBSTRATE

Document Type and Number:

Japanese Patent JPH09246531

Kind Code:

A

Abstract:

To provide the manufacture of compound semiconductor substrates, by which the same property of objects can be manufactured as transistor units, and the same property of transistors using these substrates.

The layers where n or i-AlGaAs layers 1 and n-GaAs layers 2 are stacked alternately is dry-etched in order while measuring the current value between a source 21 and a drain 22 in process, using the substrate where the n or i-AlGaAs layers 1 and n-GaAs layers 2 are stacked alternately. Hereby, the fine adjustment of the current between the source and the drain becomes possible.

Inventors:

AIGOU TAKASHI
YABE AIJI
TACHIKAWA AKIYOSHI

Application Number:

JP5485996A

Publication Date:

September 19, 1997

Filing Date:

March 12, 1996

Export Citation:

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Assignee:

NIPPON STEEL CORP

International Classes:

H01L29/201; H01L21/338; H01L29/778; H01L29/812; (IPC1-7): H01L29/778; H01L21/338; H01L29/201; H01L29/812

Attorney, Agent or Firm:

Mikio Hatta (1 outside)

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