Title:
MANUFACTURE OF EDGE LIGHT-EMITTING DIODE
Document Type and Number:
Japanese Patent JPS6428972
Kind Code:
A
Abstract:
PURPOSE:To manufacture an ELED with a good yield in manhours fewer than that by a conventional method, by employing an RIE method and sticking an insulation film appropriate in its refractive index and thickness on a light drawing surface. CONSTITUTION:Projecting structure is formed as shown in a figure by performing an inclined RIE method in the direction of an angle (theta) with a surface of a substrate. An SiN film is stuck to form an insulation film 8 by a plasma CVD method so that this film is easily stuck on an end plane. Afterwards a photoresist is used as a mask to open this film by the use of hydrofluoric acid. A refractive index of SiNx can be varied according to forming conditions. Assuming that the refractive index n0 of an InP film (and an InGaAsP film) is - 3.4 and its wavelength lambda is -1.3mum, the refractive index (n1) and thickness (d1) of the SiNx film is made appropriate in the following equation: n1<2>-n0, d1-1.84. Hence, n1-1.84 and d1-0.18mum are obtained.
Inventors:
ISODA YOICHI
Application Number:
JP18601387A
Publication Date:
January 31, 1989
Filing Date:
July 24, 1987
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L33/10; H01L33/14; H01L33/20; H01L33/30; H01L33/40; H01L33/44; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Ozeki Shinsuke