PURPOSE: To obtain a conductor wiring which is excellent in cost, can satisfy bonding property, and has a long lifetime by a method wherein an Al film containing impurities such as Cu and Si is formed via a base film of NiCr, and a wiring pattern is formed by forming a purely Al film on the film.

CONSTITUTION: The base film 2 is formed on a ceramic insulation substrate 1 by NiCr sputtering in order to increase adhesion force, the Cu 4% Al film 3 is formed by adhering Al containing 4% of Cu by sputtering, and the Al film 4 is formed by adhering purely Al, not treated by special impurity addition, by sputtering. The purely Al film 4 and the Cu 4% Al film 3 are etched to a fixed wiring pattern, and the NiCr base film 2 is removed by etching, thus leaving the conductor wiring 5 on the insulation substrate 1. The amunt of the impurities such as Cu and Si is decided at 1∼6wt%.