PURPOSE: To form a single-crystal layer having few irregularities onto an insulating film by preventing melting and recrystallization within a specified range on the downstream side in the direction of scanning of laser beams on viewing from an opening for a scribing line shaped to the insulating film on a substrate.

CONSTITUTION: An opening 3 (width of 100W200μm and length of 10W20mm) for a scribing line and openings 4 (a square of 5μm) for seeding at the time of a change into a single crystal are formed to an SiO2 film 2 on a single-crystal Si substrate 1. A poly Si film 5 in thickness of 0.5μm and an SiO2 film 6 in thickness of 100 are shaped through a CVD method, and nitride films 7, 8, 12 for controlling temperature distribution are formed. Laser beams 9 are scanned in the direction of the arrow, the poly Si layer 5 is melted 10 and recrystallized, and a single-crystal Si film 11 is shaped onto the insulating film 2. Melting is not conducted within a fixed range on the downstream side of the direction of scanning of laser beams 9 of the opening 3 at that time, and the poly Si 5 is left. Accordingly, a phenomenon in which the thickness of the Si film on the insulating film 2 in the vicinity of the opening 3 by reason of the temperature difference of molten Si in the opening 3 and on the insulating film 2 can be prevented.