PURPOSE: To obtain a photoelectric conversion element showing a high photoelectric conversion efficiency, by impressing a bias voltage while applying necessary energy in the initial region of formation of an photoactive layer so as to control the speed of formation.

CONSTITUTION: A first conductive layer, a photoactive layer and a second conductive layer are formed sequentially on a substrate 6 having a first electrode by means of glow discharge decomposition of hydrogenated silicon, and further a second electrode is provided, whereby a photoelectric conversion element is manufactured. The photoactive layer is formed of disilane in this case, and besides, an energy in an amount more than the minimum amount securing that the speed of formation of a thin film of the active layer depends mainly on the flow rate of disilane and is not affected by the amount of impressed energy, is impressed per unit mass of disilane. In the initial region of the formation of the photoactive layer, in particular, a bias voltage is impressed on a third electrode 7 provided between the substrate 6 and a discharge electrode 9 opposite to the main surface of the substrate 6 whereon the photoactive layer is formed.