Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2888213
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To realize a sufficiently low contact resistance even for a fine contact hole by removing he residues on a contact hole sidewall, dry-etching the contact hole part and etching a constriction part at the base of the contact hole.
SOLUTION: A resist mask 5 is set to be an etching mask and anisotropic dry etching is executed on a protection insulating film 4 and an inter-layer insulating film 3, and the minute contact hole 6 is formed. A reaction product 7 being the remainder is formed on the side wall of the contact hole 6 in the process. Then, the resist mask 5 is peeled in oxygen plasma and the reaction product 7 is also removed. It is not completely removed and a contact hole constriction 8 is formed. Then, the protection insulating film 4 is used as the mask to anisotropically dry-etch the contact hole 8. Then, a wiring layer 9 connected to a diffusion layer 2 is formed. Thus, low contact resistance can be realized.
Inventors:
TONO TOMOHIKO
Application Number:
JP31511796A
Publication Date:
May 10, 1999
Filing Date:
November 26, 1996
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
H01L21/28; H01L21/302; H01L21/3065; H01L21/3213; H01L21/768; H01L23/522; (IPC1-7): H01L21/768; H01L21/28; H01L21/3065; H01L21/3213
Domestic Patent References:
| JP4233225A | ||||
| JP992640A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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