MANUFACTURE OF SEMICONDUCTOR DEVICE

Japanese Patent JPH01189169

A

PURPOSE:To obtain a semiconductor device characterized by the small size of the active region of a transistor, a quick operating speed and the like, by providing an epitaxial region in a window which is provided in a substrate, and forming a collector region, a base region and an emitter region from the lower part. CONSTITUTION:An Si oxide film 2, a p-type poly Si film 3, and a CVD oxide film 4 are sequentially laminated on an n-type semiconductor substrate 1, and an window is opened (a). Then, an epitaxial region 5 is formed in the window by selective growing (b). The surface of the film 3 and the region 5 are oxidized to form an Si oxide film 3a. A p-type outer base region 5b is formed on both sides of the region. Thereafter, boron ions are implanted into the region 5 to form a p-type inner base region 5c. Then, a film 6 is formed in the window. Anisotropic etching is performed, and a window is opened for an emitter. A poly Si film is grown in the window. Ions of p and the like are implanted to form n-type emitter region 5d on the region 5. Thus a transistor can be formed in the small window.

JPS52113676	SEMICONDUCTOR DEVICE
JPH1092833	MANUFACTURE OF BIPOLAR TRANSISTOR
JPS60223159	MANUFACTURE OF SEMICONDUCTOR DEVICE

FUKUDA TADASHI

JP1507988A

July 28, 1989

January 25, 1988

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FUJITSU LTD

H01L29/73; H01L21/331; H01L29/72; H01L29/732; (IPC1-7): H01L29/72

Sadaichi Igita

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