MANUFACTURE OF SEMICONDUCTOR DEVICE - MATSUSHITA ELECTRIC IND CO LTD

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH09172070

Kind Code:

A

Abstract:

To form a metallic layer with no voids or no increase of its resistance in the interior of a through-hole with a high aspect ratio.

After depositing an insulation film 101 on a semiconductor substrate 100, a first metallic wiring layer 105 comprising a first titanium film 102, a first aluminum film 103 and a first titanium nitride film 104 is formed on the insulation film 101. After depositing thereon extensively a silicon oxide film 106, a through-hole 107 is formed in the silicon oxide film 106. By projecting the plasma of such a containing fleon as C2F6 on the first aluminum film 103, the exposed aluminum of the first aluminum film 103 to the bottom portion if the through-hole 107 reacts on C2F6 to deposite a polymer film 108 generated by the reaction of aluminum in C2F6 on the sidewall of the through-hole 107. Then, a copper film to serve as a contact is deposited only in the interior of the through-hole 107.

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Inventors:

HIRAO HIDEJI
TAMAOKI NORIHIKO
MAYUMI SHUICHI

Application Number:

JP32926595A

Publication Date:

June 30, 1997

Filing Date:

December 18, 1995

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L23/52; H01L21/3205; H01L21/768; (IPC1-7): H01L21/768; H01L21/3205

Attorney, Agent or Firm:

Hiroshi Maeda (1 person outside)

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