Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58132948
Kind Code:
A
Abstract:
PURPOSE:To realize complete isolation between elements by a method wherein resistivity is heightened of a B phosphide layer grown epitaxially on an Si substrate. CONSTITUTION:A B phosphide layer 12 is epitaxially grown on an Si substrate 11, which is followed by the formation of an Si nitride film to cover the layer 12. Next, the entirety is subjected to a heat treatment that is effected in inert gas at temperatures not lower than 1,000 deg.C lasting not shorter than 2hr. In this process, excessive P ions in the B phosphide are driven into the Si substrate 11 for the formation of an N type diffused layer 13 on the Si substrate 11. In the B phosphide layer 12, the initial resistivity 10<-2>OMEGA/cm is now 10<6>OMEGA/cm or higher. Further, an Si layer is epitaxially grown and then removed except where active element regions are located.
Inventors:
SHIYOUNO KATSUFUSA
NONAKA KATSUKI
NONAKA KATSUKI
Application Number:
JP1460082A
Publication Date:
August 08, 1983
Filing Date:
February 01, 1982
Export Citation:
Assignee:
TDK ELECTRONICS CO LTD
International Classes:
H01L27/00; H01L21/205; H01L21/762; H01L21/86; H01L27/12; (IPC1-7): H01L21/205; H01L21/76; H01L21/84; H01L27/12
Attorney, Agent or Firm:
Agata Akira