Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS61198719
Kind Code:
A
Abstract:
PURPOSE:To increase a growth rate, to reduce the adhesion of an undesirable chemical seed and to improve selectivity by irradiating the upper section of a substrate by beams having a wavelength of 400-1,000nm when a high melting- point metallic film is formed through a CVD method. CONSTITUTION:A P-type Si substrate 1 to which a diffusion layer 2 is shaped is introduced into a furnace from a window in an SiO2 film 3, and heated at a fixed temperature in a H2 current. When WF6 is induced under the projection of beams having a wavelength of 400-1,000nm, no W particle is generated on the SiO2 film 3, and a W layer 5 is formed selectively into the window. A reaction from the lateral direction to the interface B of Si/SiO2 is hardly generated. When beams are projected from the back, beams are transmitted through the substrate, and a wave range in which beams are not transmitted through a film on a film non-formation region on the surface of the substrate is used. Beams in different wave ranges may each be projected from the surface and the back. WF6 is excited by beams having a predetermined wavelength in either case, reducing properties are promoted, and the adhesion of chemical seeds causing the generation of W particles on SiO2 is reduced, thus forming the W layer at high speed with excellent selectivity.
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Inventors:
ITO HITOSHI
MORIYA TAKAHIKO
MORIYA TAKAHIKO
Application Number:
JP3942785A
Publication Date:
September 03, 1986
Filing Date:
February 28, 1985
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
C23C16/48; H01L21/268; H01L21/28; H01L21/285; (IPC1-7): C23C16/06
Attorney, Agent or Firm:
Takahisa Kimura