Title:
MANUFACTURE OF SEMICONDUCTOR DYNAMIC QUANTITY SENSOR
Document Type and Number:
Japanese Patent JP3489273
Kind Code:
B2
Abstract:
PURPOSE: To provide a manufacturing method of a semiconductor dynamic quantity sensor which prevents a movable part from seizing up on a board when the movable part of beam construction is formed by etching a sacrificial layer using a new method.
CONSTITUTION: A wiring (polysilicon thin film) 2 is formed on a silicon substrate 1 using an LPCVD method. At this time, a rugged part 3 is formed on the surface of the board 1 by conducting heat treatment at the low temperature of about 620°C. A silicon oxide film is formed thereon as a sacrificial layer, a polysilicon thin film is formed thereon as a movable part forming thin film, and a movable part 5 is formed by removing the silicon oxide film under the polysilicon thin film by etching. As a result, the movable part 5 of beam construction, consisting of a thin film, is arranged on the upper part of the silicon substrate 1 leaving the prescribed interval. An etchant and a substitution liquid are introduced between the movable part 5 and the substrate, the movable part 5 is pulled by the substrate, but the seizure of the movable part 5 is prevented by the rugged part 3.
Inventors:
Yoshitaka Goto
Makiko Fujita
Yukihiro Takeuchi
Makiko Fujita
Yukihiro Takeuchi
Application Number:
JP16106595A
Publication Date:
January 19, 2004
Filing Date:
June 27, 1995
Export Citation:
Assignee:
株式会社デンソー
International Classes:
G01P15/125; B81B3/00; B81C1/00; G01P15/00; G01P15/08; G01P15/12; H01L29/84; (IPC1-7): H01L29/84; G01P15/125
Domestic Patent References:
| JP4286165A | ||||
| JP6148012A |
Attorney, Agent or Firm:
Hironobu Onda
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