PURPOSE: To simplify electrode manufacturing process by connecting a semiconductor layer which was a rear to a surface and by making an electrode only for a surface to make the whole device in planar type structure.

CONSTITUTION: After a semiconductor layer 2 which consists of InGaAsP is grown onto a P-type InP substrate 1, an N-type InP layer 3 is formed onto the semiconductor layer 2. An insulation region 4 is formed until it reaches the P-type InP substrate 1 by ion implantation using stripe pattern 5 as a mask to form a current constriction region. Then etching is made until it exceeds the insulation region 4 using a stripe pattern 6 which is wider than the described stripe pattern 5 and P-type InP 7 is buried into the region removed by etching. At the end, an N-type electrode 8 and a P-type electrode 9 are formed onto the N-type InP region 3 and the buried P-type InP region 7, respectively.