PURPOSE: To enable reduction and high output of threshold current by adding n-type or p-type impurity of specified range at least to a well layer among light emitting layers.
CONSTITUTION: An n-type AlInAs layer 2 which becomes a primary clad layer is grown onto an n-type InP substrate 1. Thereafter, a GaInAs 6 which becomes a quantum well and an AlInAs 7 which becomes a barrier layer are formed for 1∼10 cycles to form an MQW light emitting layer 3. When the MQW light emitting layer 6 is formed, n-type or p-type impurity is added in a specified quantity at least to the described well layer 6. Then an electrode contact layer 5 and an AlInAs layer 4 which become a secondary clad layer are formed. The specified range of the described impurity is set at 1016∼1019cm-3, and silicon and beryllium are used as the n-type impurity and the p-type impurity, respectively.
UKO KATSUYUKI
SAKAI KAZUO
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