Title:
MANUFACTURE OF SEMICONDUCTOR MATERIAL
Document Type and Number:
Japanese Patent JPS5751194
Kind Code:
A
Abstract:
In a process for preparing a body of semiconductor material in which a slim rod of semiconductor material in a chemical vapor deposition chamber is maintained at a temperature sufficient to decompose gaseous compounds containing semiconductor material, and a reaction gas comprising the said compounds is introduced into the chemical vapor deposition chamber whereby decomposition of the gaseous compounds occurs and semiconductor material is deposited on the slim rod to form an enlarged semiconductor body, a gas curtain is created along the inner wall of the chemical vapor deposition chamber substantially preventing the gaseous compounds from decomposing on the wall. Apparatus for operating the process comprises a chemical vapor deposition chamber (23) having reaction gas entry (32) and exit (35) means, and for the creation of the gas curtain, gas entry means (34) and flow guide means (36).
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Inventors:
POORU MAIKURU GARABAGURIA
HENRII UIRIAMU GATSUTSUSHIE
HENRII UIRIAMU GATSUTSUSHIE
Application Number:
JP11756581A
Publication Date:
March 25, 1982
Filing Date:
July 27, 1981
Export Citation:
Assignee:
MONSANTO CO
International Classes:
C01B33/02; C01B33/035; C30B25/00; C30B25/02; C30B25/10; C30B25/14; C30B25/18; C30B29/06; H01L21/205; (IPC1-7): C01B33/02; C30B15/00; C30B25/00; C30B29/06; H01L21/205