Title:
MANUFACTURE OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3431033
Kind Code:
B2
Abstract:
PURPOSE: To strictly control the introduced amount of a catalyst element in a method of obtaining crystalline silicon by heat treatment by using the catalytic element promoting crystallization.
CONSTITUTION: An extremely thin oxide film 13 is formed on an amorphous silicon film 12 formed on a glass substrate 11 and a water solution 14 of an acetate solution or the like having 10 to 200ppm (to be adjusted) of a catalytic element such as nickel. This state is held for a prescribed time and spin drying is performed by using a spinner 15. Then, heat treatment is performed at 550°C for four hours so as to obtain a crystalline silicon film. In this constitution, concentration of a catalytic element in a finished crystalline silicon film can be accurately controlled by adjusting the concentration of the catalytic element in the solution.
Inventors:
Hisashi Ohtani
Akiharu Miyanaga
Akiharu Miyanaga
Application Number:
JP29463393A
Publication Date:
July 28, 2003
Filing Date:
October 29, 1993
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
C01B33/02; H01L21/02; H01L21/20; H01L21/336; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L21/20; C01B33/02; H01L21/336; H01L27/12; H01L29/786
Domestic Patent References:
| JP3280420A | ||||
| JP2140915A | ||||
| JP567635A | ||||
| JP63142807A | ||||
| JP6474754A | ||||
| JP220059A |
Other References:
【文献】米国特許5147826(US,A)
Attorney, Agent or Firm:
Hirokuni Kamo
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