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Title:
MANUFACTURE OF THIN FILM MAGNETIC IMPEDANCE EFFECT COMPONENT
Document Type and Number:
Japanese Patent JP3688942
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To obtain a thin film magnetic impedance effect component with a large rate of change in impedance to change in an external magnetic field and superior sensitivity and resolution by forming a magnetically soft thin film in a magnetostatic field in a predetermined direction.
SOLUTION: A magnetically soft thin film 12 is formed on a substrate 11 made of a non-magnetic material in a magnetostatic field H1 of a predetermined direction. In other words, the substrate 11 and magnets 30 for impressing the magnetostatic field H1 are placed on a substrate holding part 28 in the chamber 22 of a magnetron sputtering device 21. Then by impressing a high frequency on an electrode 24 from a high-frequency power source 29, magnetron discharge is generated by the interaction between an electric field and magnetic field, and a target 23 is sputtered to form a magnetically soft thin film 12 on the substrate 11. By forming the magnetically soft thin film 12 in a magnetostatic field in this way, it is possible to add uniaxial anisotropy to the magnetically soft thin film 12 to be a magnetic sensing part and to enlarge rate of change in impedance at the time when an external magnetic field is impressed.


Inventors:
Ryo Nakabayashi
Takashi Hatauchi
Application Number:
JP23499699A
Publication Date:
August 31, 2005
Filing Date:
August 23, 1999
Export Citation:
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Assignee:
ALPS ELECTRIC CO.,LTD.
International Classes:
H01L43/00; G01R33/02; (IPC1-7): G01R33/02; H01L43/00
Domestic Patent References:
JP8320362A
JP5190327A
JP3136216A
JP1090382A
Attorney, Agent or Firm:
野▲崎▼ 照夫