Title:
半導体装置の製造方法およびエッチング方法
Document Type and Number:
Japanese Patent JP7400058
Kind Code:
B2
Abstract:
In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, "x" denotes an integer of three or more, and "y" and "z" respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.
Inventors:
Takaya Ishino
Toshiyuki Sasaki
Mitsuharu Shimoda
Hisashi Shimizu
Toshiyuki Sasaki
Mitsuharu Shimoda
Hisashi Shimizu
Application Number:
JP2022174854A
Publication Date:
December 18, 2023
Filing Date:
October 31, 2022
Export Citation:
Assignee:
Kioxia Corporation
Kanto Denka Kogyo Co., Ltd.
Kanto Denka Kogyo Co., Ltd.
International Classes:
H01L21/3065; H01L21/336; H01L29/788; H01L29/792; H10B41/27; H10B43/27
Domestic Patent References:
| JP2018050074A | ||||
| JP2013175605A | ||||
| JP2006156539A | ||||
| JP2011086966A | ||||
| JP2006128245A |
Attorney, Agent or Firm:
Manabu Miyajima
Takeshi Sekine
Akira Akaoka
Suguru Yamanoi
Takeshi Sekine
Akira Akaoka
Suguru Yamanoi
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