Title:
MANUFACTURING METHOD FOR FERROELECTRIC THIN FILM AND FOR CAPACITIVE ELEMENT
Document Type and Number:
Japanese Patent JP3776105
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To suppress a c-axis orientation and reduce a heat budget necessary for crystallization in manufacturing a ferroelectric thin film having a bismuth layer structure.
SOLUTION: A manufacturing method for the ferroelectric thin film is provided. The method includes a process of forming a sedimentary film containing at least Bi, A, and B on a board, and a process of crystallizing the sedimentary film by a heat treatment to form the ferroelectric thin film represented by the chemical formula: Bi2Am-1BmO3m+3 (where m stands for 2, 3, 4, 5, or 6; A stands for any one of metals having 1, 2, or 3 valences or a metal made by combining those metals; and B stands for any one of metals having 4, 5, or 6 valences or a metal made by combining those metals.) The process of forming the sedimentary film includes a process of changing the composition ratio of Bi in the sedimentary film in a direction of film thickness, so that the composition ratio of Bi becomes maximum near the center of the sedimentary film in the direction of film thickness.
Inventors:
Toru Nasu
Shinichiro Hayashi
Shinichiro Hayashi
Application Number:
JP2003420680A
Publication Date:
May 17, 2006
Filing Date:
December 18, 2003
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
C23C16/40; H01L21/316; H01L21/8246; H01L27/105; (IPC1-7): H01L21/316; C23C16/40; H01L27/105
Domestic Patent References:
| JP11026706A | ||||
| JP2003526219A | ||||
| JP2001521584A | ||||
| JP2002324839A | ||||
| JP2002029753A | ||||
| JP2001298164A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada
Hiroshi Koyama
Hiroshi Takeuchi
Yuji Takeuchi
Katsumi Imae
Tomoo Harada