Title:
フラッシュメモリ素子の製造方法
Document Type and Number:
Japanese Patent JP5116069
Kind Code:
B2
Abstract:
A method of fabricating flash memory devices includes the steps of forming a stop nitride film and an oxide film on a semiconductor substrate having a predetermined structure formed therein, forming trenches in the oxide film and the stop nitride film, forming barrier oxide films on lateral faces of the trenches by an atomic layer deposition method, and forming bit lines within the trenches.
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Inventors:
Hong Yeon Ball
Application Number:
JP2005351641A
Publication Date:
January 09, 2013
Filing Date:
December 06, 2005
Export Citation:
Assignee:
SK hynix Inc.
International Classes:
H01L21/8247; H01L21/336; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP2005026659A | ||||
| JP2000156379A | ||||
| JP2004040110A | ||||
| JP2005011940A | ||||
| JP2004531053A | ||||
| JP2004311947A |
Attorney, Agent or Firm:
Hiroyuki Nakagawa