Title:
MANUFACTURING METHOD OF MONOCRYSTAL
Document Type and Number:
Japanese Patent JP3631415
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a monocrystal manufacturing method which can bring up into the monocrystal of a material even generally difficult to bring up into the monocrystal because of having a very narrow liquidus line.
SOLUTION: This monocrystal manufacturing method is characterized in that by using the traveling solvent floating method (TSFZ method), a growing rate is limited ≤0.1 mm/h, and a temperature gradient at interface between solid and liquid phases is ≥300°C/cm. For a material which has very narrow liquidus line such as Bi2Sr2Ca2Cu2O10+δ, is generally difficult to grow the monocrystal, but the monocrystal can be produced by this method. The crystal size shown in the figure is 4×2×0.1 mm.
Inventors:
Takao Watanabe
Azusa Matsuda
Azusa Matsuda
Application Number:
JP2000161628A
Publication Date:
March 23, 2005
Filing Date:
May 31, 2000
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
C30B13/02; C30B29/22; (IPC1-7): C30B13/02; C30B29/22
Domestic Patent References:
| JP10120495A | ||||
| JP58110498A | ||||
| JP59137392A | ||||
| JP3159988A |
Other References:
S. Hosoya et al.,Single Crystal Growth of La2-xSrxCuO4 with Improved Lamp-Image Floating-Zone Furnace,Physica C,1994年, Vols.235-240,pp.547-548
Attorney, Agent or Firm:
Masayoshi Amemiya
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