Title:
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2022082183
Kind Code:
A
Abstract:
To provide a method for controlling a nitride semiconductor light emitting element that can improve luminous efficiency in a nitride semiconductor light emitting element employing a single quantum well structure.SOLUTION: It has a buffer layer growth process S5 for growing a buffer layer 20 on a substrate 10 set in a susceptor 103; an n-type semiconductor layer growth process S6 for growing the n-type cladding layer 30 on the buffer layer 20; and an active layer growth process S7 for growing an active layer 50 having a single quantum well structure 50A on the n-type cladding layer 30, and in the buffer layer growth process S5, the buffer layer 20 is grown by depositing a deposit D with a thickness T of between 50 μm and 250 μm at a position other than the bottom of a pocket 111 where the substrate 10 is set on the susceptor 103.SELECTED DRAWING: Figure 3
Inventors:
TAKAO KAZUFUMI
MATSUKURA YUSUKE
MATSUKURA YUSUKE
Application Number:
JP2020193594A
Publication Date:
June 01, 2022
Filing Date:
November 20, 2020
Export Citation:
Assignee:
NIKKISO CO LTD
International Classes:
H01L21/205; C23C16/34; C30B25/02; C30B29/38; H01L33/06; H01L33/12; H01L33/32
Domestic Patent References:
| JP2014047097A | 2014-03-17 |
Foreign References:
| WO2003017345A1 | 2003-02-27 |
Attorney, Agent or Firm:
Hirata International Patent Office