Title:
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2022082182
Kind Code:
A
Abstract:
To provide a nitride semiconductor light emitting element and a method for controlling a nitride semiconductor light emitting element, which can improve luminous efficiency in a nitride semiconductor light emitting element employing a single quantum well structure.SOLUTION: It has a substrate 10, a buffer layer 20 formed on the substrate 10, an n-type cladding layer 30 formed on the buffer layer 20, and an active layer 50 having a single quantum well structure 50A formed on the n-type cladding layer 30, and the half width of the X-ray rocking curve for the (102) plane in the buffer layer 20 is between 369.4 arcsec and 492.5 arcsec.SELECTED DRAWING: Figure 1
Inventors:
TAKAO KAZUFUMI
MATSUKURA YUSUKE
MATSUKURA YUSUKE
Application Number:
JP2020193593A
Publication Date:
June 01, 2022
Filing Date:
November 20, 2020
Export Citation:
Assignee:
NIKKISO CO LTD
International Classes:
H01L33/12; H01L21/205; H01L33/06; H01L33/32
Domestic Patent References:
| JP2014093369A | 2014-05-19 | |||
| JP2019121655A | 2019-07-22 | |||
| JP2013016711A | 2013-01-24 | |||
| JP2008056553A | 2008-03-13 | |||
| JP2006134966A | 2006-05-25 | |||
| JP2006134967A | 2006-05-25 |
Foreign References:
| WO2013021464A1 | 2013-02-14 | |||
| WO2015115266A1 | 2015-08-06 |
Attorney, Agent or Firm:
Hirata International Patent Office