Title:
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2002280360
Kind Code:
A
Abstract:
To enable ashing of a photosensitive material for which selection ratio to Ru is improved, and to prevent the partial loss of an Ru film.
On an Si substrate 1, the Ru film 2 and an SiO2 layer 4 are formed. A resist pattern 3 composed of the photosensitive material (photoresist) is formed on the SiO2 film 4. With the resist pattern 3 as a mask, the SiO2 layer 4 is partially etched, and a contact hole 6 is formed. The Ru film 2 is exposed inside the contact hole 6. Then, by using an ashing gas, which is the gaseous mixture of O2 and N2 for which the composition rate of N2 is 50% or higher, plasma ashing is performed at the substrate temperature of 200°C or higher, and the resist pattern 3 is peeled off.
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Inventors:
ONO YASUHIRO
SHINOHARA SOTA
SHINOHARA SOTA
Application Number:
JP2001076016A
Publication Date:
September 27, 2002
Filing Date:
March 16, 2001
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/302; G03F7/42; H01L21/027; H01L21/3065; H01L21/311; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; H01L21/768; (IPC1-7): H01L21/3065; H01L21/027; H01L27/105; H01L27/108; H01L21/8242
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)
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