Title:
METHOD OF CONTACT HOLE WITH SLANT SIDE WALL IN SIO2 INSULATING LAYER
Document Type and Number:
Japanese Patent JPS63272038
Kind Code:
A
Abstract:
Contact holes (5) with sloping walls (6) are produced in intermediate oxide layers (2) by carrying out a combination of isotropic and anisotropic etching steps at different etching rates during dry etching in fluorine-containing plasma. In this process, an auxiliary layer (3) consisting of a material containing silicon oxide is applied over the entire surface before the photoresist mask (4) is produced and the arrangement is etched predominantly isotropically down to about half the etching depth of the intermediate oxide layer (2) and then the remaining intermediate oxide layer (2) is anisotropically etched selectively down to the layer (1) underneath containing the surface to be contacted. The auxiliary layer (3) is removed with the photoresist mask (4). The method according to the invention makes it possible to produce wall angles (6) in contact holes (5) of less than 90 DEG reproducibly. The method is used in the production of VLSI semiconductor circuits.
Inventors:
FUIRINDAAJINGU GUREWAARU
PEETAA MOKURITSUSHIYU
HANSUPEETAA ERUPU
PEETAA MOKURITSUSHIYU
HANSUPEETAA ERUPU
Application Number:
JP5732288A
Publication Date:
November 09, 1988
Filing Date:
March 09, 1988
Export Citation:
Assignee:
SIEMENS AG
International Classes:
H01L21/302; H01L21/3065; H01L21/311; H01L21/3205; H01L21/768; (IPC1-7): H01L21/302; H01L21/88
Attorney, Agent or Firm:
Tomimura Kiyoshi
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