MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Japanese Patent JP2004014738

A

To provide a method capable of fabricating a thin semiconductor device without remodeling the facility.

The method for fabricating a thin semiconductor device comprises a step for forming a first conductivity layer and a second conductivity layer on a first semiconductor substrate, and a step for forming an oxide film on the surface of any one of the second conductivity layer formed on the first semiconductor substrate or a second semiconductor substrate and bonding the first semiconductor substrate and the second semiconductor substrate through the oxide film. The method further comprises a step for polishing the first semiconductor substrate to have a specified thickness; a step for forming a base region, an emitter region, a gate electrode and an emitter electrode on the first semiconductor substrate; a step for forming a mask selectively on the surface of the second semiconductor substrate; a step for sealing the surface on the side of the gate electrode and the emitter electrode formed on the first semiconductor substrate, and removing the second semiconductor substrate; a step for removing the mask and the exposed oxide film; and a step for forming an electrode on the surface of the second conductivity layer.

KAMISHIRO MICHIHIRO
SHUTTO EIKO
ENDO RIKUO
KAMEYAMA TSUTOMU
KITAMURA KENJI
KATAYAMA MASATOSHI
ISHIZUKA NOBUTAKA

JP2002165254A

January 15, 2004

June 06, 2002

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HONDA MOTOR CO LTD
SHINDENGEN ELECTRIC MFG

H01L27/12; H01L21/02; H01L21/336; H01L29/739; H01L29/78; (IPC1-7): H01L21/336; H01L21/02; H01L27/12; H01L29/78

Yoichiro Shimoda
Tamiya Hiroshi

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