To improve production efficiency while suppressing scratches on a wafer in a method of adopting an ion implantation peeling method in the manufacturing method of a stucked wafer.

This manufacturing method for the stucked wafer adopting the ion implantation peeling method has a process of separating a laminated body 34 of a remaining wafer 38 and the stucked wafer 39 into individual wafers after heat treatment for sticking. First, before a separation process, the laminated body 34 is taken out from a boat 27 of the heat treatment and housed in a cassette 10 for separation. Then, a separation member 1 where a slit 2 is formed is arranged at a wafer take-in/take-out port 10w of the cassette 10 for the separation, and the cassette 20 for recovery is arranged on the opposite side. Then, they are integrally inclined and only the remaining wafer 38 positioned on an upper side of the laminated body 34 is slid and moved to the cassette 20 for the recovery. A mechanism is such that a lower end of the slit 2 becomes an obstacle and the stucked wafer 39 positioned on a lower side cannot be moved to the cassette 20 for the recovery.