Title:
垂直共振器型発光素子及び垂直共振器型発光素子の製造方法
Document Type and Number:
Japanese Patent JP7101374
Kind Code:
B2
Abstract:
Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.
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Inventors:
Tetsuya Takeuchi
Red saki
Kazuki Kiyohara
Takizawa Masaru
Liang Yoshiho
Red saki
Kazuki Kiyohara
Takizawa Masaru
Liang Yoshiho
Application Number:
JP2021128821A
Publication Date:
July 15, 2022
Filing Date:
August 05, 2021
Export Citation:
Assignee:
School corporation Meijo University
Stanley Electric Co., Ltd.
Stanley Electric Co., Ltd.
International Classes:
H01S5/183
Domestic Patent References:
| JP2001284291A | ||||
| JP8172238A | ||||
| JP2011227980A | ||||
| JP2011243857A | ||||
| JP2009200478A | ||||
| JP2000082866A |
Foreign References:
| WO2017055490A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Lexto International Patent Office