To provide a method for manufacturing a mask for electron beam proximity exposure at low costs.

This method is provided for manufacturing a mask used in an electron beam proximity exposure apparatus. The apparatus includes an electron beam source 14 emitting parallel electron beams 15, a mask 30 disposed in a path of the electron beams 15 and having openings, and a stage moved while holding a sample 40. A pattern corresponding to the opening of the mask 30 is exposed on the surface of the sample 40 by electron beams passed through the openings. This method comprises the steps of dividing the mask 30 into a plurality of partial regions A-P to form a plurality of partial masks 111 having openings with the same patterns as those of the plurality of partial regions A-P, and manufacturing a mask 30 by an electron beam proximity exposure method while the patterns of the plurality of partial masks 111 are exposed at positions corresponding to a mask substrate 31.