PURPOSE: To obtain the title material wherein the change rate against a temperature change of saturation magnetization can be changed without increasing a ferromagnetic half-width by a method wherein, when its chemical formula is expressed as y3-x-yGdxFe5-y-zGayAlzO12, (x) to (y) are situated within a specific range on a ternary diagram on which (x) to (z) are represented respectively as the x-axis to the z-axis.
CONSTITUTION: In a material, for magnetostatic-wave device use, to be used as a material for a garnet film for magnetostatic-wave use, which is grown on a Gd3Ga5O12 substrate, (x), (y) and (z) for its chemical formula expressed as Y3-xGdxFe5-y-zGayAlzO12 are situated within a range surrounded by a polyhedron ABCDEFG whose vertexes are a point A (0, 0, 0), a point B (0.6, 0, 0), a point C (1, 0.88, 0), a point D (0.41, 1, 0), a point E (0, 0.09, O), a point F (1, 0, 0.34), a point G (1, 0, 0.49) and a point H (0, 0, 0.02) and outside the upper part of the point A on a ternary diagram on which (x), (y) and (z) are represented respectively as the x-axis, the y-axis and the z-axis. The difference in a lattice constant between the substrate and the garnet film and the like become large at the outside of said polyhedron.
FUJINO MASARU
AOTA MITSUHIRO
KUMATORIYA MAKOTO
TAKAGI HIROSHI
