Title:
MEMBER IN WHICH CARBON FILM HAS BEEN FORMED
Document Type and Number:
Japanese Patent JP3236594
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a high hardness by forming an amorphous or semiamorphous carbon film contg. a carbon having Sp3 hybrid orbital and whose hardness gradually increases as it is apart from a face to be formed on the face to be formed of an organic resin or the like.
SOLUTION: In a reaction system 8 provided with an exhaust system 16, on a 1st electrode 11 connected to a high frequency power source 13 via a matching transformer 14, the faces to be formed of an organic resin, glass, magnetic substance, metal, ceramic, a semiconductor or the like are placed, and, oppositely thereto, a 2nd electrode 12 having an area larger than this is arranged, which is connected to a DC bias power source 15. The reaction space 20 of the reaction system 8 is fed with reactive gas, doping gas or the like through microwave energy 10, which is excited by plasma to form a carbon film on the face to be formed. At this time, the film forming conditions such as reaction pressure are controlled, by which the carbon film is made into the one contg. a carbon having Sp3 hybrid orbital, having an amorphous or semiamorphous structure and having continuously or stepwise increased Vickers hardness of ≥2,000 kg/mm2.
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Inventors:
Kenji Ito
Application Number:
JP2000058570A
Publication Date:
December 10, 2001
Filing Date:
March 02, 1988
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
C01B31/02; C23C16/27; G11B5/187; G11B5/72; G11B5/84; (IPC1-7): C23C16/27; C01B31/02; G11B5/72; G11B5/84
Domestic Patent References:
| JP634068A | ||||
| JP60184681A | ||||
| JP62157602A | ||||
| JP62117513A | ||||
| JP62180056A | ||||
| JP6320742A | ||||
| JP6326371A | ||||
| JP6311671A | ||||
| JP6283471A | ||||
| JP5848428A | ||||
| JP6314158A |
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